VNS1NV04价格
参考价格：￥3.4491
型号：VNS1NV04 品牌：STMicroelectronics 备注：这里有VNS1NV04多少钱，2026年最近7天走势，今日出价，今日竞价，VNS1NV04批发/采购报价，VNS1NV04行情走势销售排行榜，VNS1NV04报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNS1NV04 | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 |   | |
VNS1NV04 | OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | |
VNS1NV04 | OMNIFET II fully autoprotected Power MOSFET 文件：538.37 Kbytes Page：33 Pages | STMICROELECTRONICS 意法半导体 | | |
VNS1NV04 | fully autoprotected Power MOSFET 文件：406.97 Kbytes Page：33 Pages | STMICROELECTRONICS 意法半导体 | | |
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II：全自动保护功率MOSFET The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdow • In compliance with the 2002/95/EC european directive \n• Compatible with standard power mosfet \n• ESD protection \n• Diagnostic feedback through input pin \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Direct access to the ; | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard po | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard po | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard po | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II全自动保护功率MOSFET The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.\n\n Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh e • ESD protection \n• Diagnostic feedback through input pin \n• Compatible with standard Power MOSFET \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Integrated ; | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | ||
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：416.49 Kbytes Page：28 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：416.49 Kbytes Page：28 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：538.37 Kbytes Page：33 Pages | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：538.37 Kbytes Page：33 Pages | STMICROELECTRONICS 意法半导体 | |
VNS1NV04产品属性
- 类型
描述
- Technology：
M0-3
- RDS(on)_typ(mΩ)：
250
- General Description：
OMNIFET II
- Marketing Status：
Active
- Package：
SO-8
- RoHS Compliance Grade：
Ecopack2
- Clamp Voltage_typ(V)：
45
- Drain Current Limit_typ(A)：
2.6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
25+ |
SOIC-8_150mil |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST/意法 |
25+ |
SOP8 |
12496 |
ST/意法原装正品VNS1NV04PTR-E即刻询购立享优惠#长期有货 |
|||
ST |
2430+ |
SOP8 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
25+ |
SOP-8 |
8000 |
深圳现货,原装正品 |
|||
STM |
23+ |
SO-8 |
7500 |
||||
ST/意法 |
26+ |
原厂封装 |
102800 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
ST/意法 |
25+ |
SOP-8 |
30000 |
只做原装现货假一罚十 |
|||
ST/意法原装正品 |
26+ |
SOP8 |
22899 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
23+ |
SOP |
20000 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
|||
ST(意法) |
25+ |
SOIC-8_150mil |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
VNS1NV04芯片相关品牌
VNS1NV04规格书下载地址
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VNS1NV04数据表相关新闻
VNQ7E100AJTR
进口代理
2024-11-22VNS1NV04DP-E 原装现货
VNS1NV04DP-E
2022-12-6VNQ7140AJTR
进口代理
2022-10-22VNQ7E100AJTR
全新原装现货 支持第三方机构验证
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2022-4-22VNS1NV04DPTR-E
https://hfx03.114ic.com/
2022-3-28
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