VNS1NV04价格

参考价格:¥3.4491

型号:VNS1NV04 品牌:STMicroelectronics 备注:这里有VNS1NV04多少钱,2025年最近7天走势,今日出价,今日竞价,VNS1NV04批发/采购报价,VNS1NV04行情走势销售排行榜,VNS1NV04报价。
型号 功能描述 生产厂家&企业 LOGO 操作
VNS1NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

VNS1NV04

OMNIFET II fully autoprotected Power MOSFET

文件:538.37 Kbytes Page:33 Pages

STMICROELECTRONICS

意法半导体

VNS1NV04

fully autoprotected Power MOSFET

文件:406.97 Kbytes Page:33 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in

STMICROELECTRONICS

意法半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:416.49 Kbytes Page:28 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:416.49 Kbytes Page:28 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:538.37 Kbytes Page:33 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:538.37 Kbytes Page:33 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:538.37 Kbytes Page:33 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:538.37 Kbytes Page:33 Pages

STMICROELECTRONICS

意法半导体

VNS1NV04产品属性

  • 类型

    描述

  • 型号

    VNS1NV04

  • 功能描述

    MOSFET N-Ch 40V 1.7A Omni

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-11 14:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+23+
SOP-8
27130
绝对原装正品全新进口深圳现货
ST/意法
24+
SOP-8
42916
只做原装进口现货
ST/意法
2407+
SOIC
30098
全新原装!仓库现货,大胆开价!
STM
23+
SOP8
8560
受权代理!全新原装现货特价热卖!
ST
25+
N/A
7500
原装现货17377264928微信同号
ST/意法
24+
SOP-8
28235
郑重承诺只做原装进口现货
ST
SOP-8
1000
原装长期供货!
ST/意法半导体
24+
SO-8
6000
全新原装深圳仓库现货有单必成
ST/意法半导体
21+
SO-8
10000
只做原装,质量保证
ST
23+
SOP8
6000
专业配单保证原装正品假一罚十

VNS1NV04数据表相关新闻