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位置：首页 > IC中文资料第386页 > VNS1NV04D

VNS1NV04D价格

参考价格：￥3.7547

型号：VNS1NV04DP-E 品牌：STMICROELECTRONICS 备注：这里有VNS1NV04D多少钱，2025年最近7天走势，今日出价，今日竞价，VNS1NV04D批发/采购报价，VNS1NV04D行情走势销售排行榜，VNS1NV04D报价。
型号 功能描述 生产厂家&企业 LOGO 操作
VNS1NV04D

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半导体

VNS1NV04D

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半导体

VNS1NV04D13TR

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半导体

VNS1NV04D-E

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半导体

VNS1NV04DP-E

OMNIFET II fully autoprotected Power MOSFET

Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in

STMICROELECTRONICS

意法半导体

VNS1NV04DPTR-E

OMNIFET II fully autoprotected Power MOSFET

Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in

STMICROELECTRONICS

意法半导体

VNS1NV04DP-E

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器

STMICROELECTRONICS

意法半导体

VNS1NV04DPTR-E

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器

STMICROELECTRONICS

意法半导体

VND1NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

VND1NV04-E

for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

STMICROELECTRONICS

意法半导体

VND1NV04

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages

STMICROELECTRONICS

意法半导体

VND1NV04-E

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages

STMICROELECTRONICS

意法半导体

VND1NV04TR

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages

STMICROELECTRONICS

意法半导体

VNS1NV04D产品属性

  • 类型

    描述

  • 型号

    VNS1NV04D

  • 功能描述

    MOSFET N-Ch 40V 1.7A Omni

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

VNS1NV04D供应商更多...

更新时间：2025-8-10 12:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市亿智腾科技有限公司
VNS1NV04DPTR-E
ST
24+
NA
2500
原装公司现货,假一罚十,只做原装百分百有货
询价
深圳市锦喆鸿电子有限公司
VNS1NV04D
STM
21+
SOP-8
12588
原装正品,自己库存 假一罚十
询价
深圳市坤融电子科技有限公司
VNS1NV04DPTR-E
ST
24+
SOP8
8950
BOM配单专家,发货快,价格低
询价
深圳市冠亿通科技有限公司
VNS1NV04DPTR-E
ST
25+
SOP-8
8000
深圳现货,原装正品
询价
深圳市威尔健半导体有限公司
VNS1NV04D
ST/意法
23+
SOP8
50000
全新原装正品现货,支持订货
询价
深圳市昌和盛利电子有限公司
VNS1NV04DPTR
ST
23+
SOP8
580000
询价
深圳市正纳电子有限公司
VNS1NV04D
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市宝芯创电子有限公司
VNS1NV04DPTR-E
ST
21+
SOP8
10000
只做原装,公司现货,提供一站式BOM配单服务!
询价
深圳市赛特兴科技有限公司
VNS1NV04DPTR-E
ST
23+
na
17550
正规渠道,只有原装!
询价
深圳市明嘉莱科技有限公司
VNS1NV04D
ST/意法
25+
SOP-8
860000
明嘉莱只做原装正品现货
询价

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