OMNIFET II fully autoprotected Power MOSFET

Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器

OMNIFET II：全自动保护功率MOSFET

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages