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VNP35N07价格
参考价格：￥11.5763
型号：VNP35N07-E 品牌：STMicroelectronics 备注：这里有VNP35N07多少钱，2025年最近7天走势，今日出价，今日竞价，VNP35N07批发/采购报价，VNP35N07行情走势销售排行榜，VNP35N07报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNP35N07 | ?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP35N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linearcurrent limitation and overvoltage clamp protect the chip in harsh | STMICROELECTRONICS 意法半导体 |   | |
VNP35N07 | 封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：ISOWATT-220-3 包装：管件 描述：IC PWR DRVR N-CH 1:1 ISOWATT220 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET 文件：139.31 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET 文件：139.31 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | |
VNP35N07产品属性
- 类型
描述
- 型号
VNP35N07
- 功能描述
MOSFET N-Ch 70V 35A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-220AB |
1698 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
ST(意法) |
24+ |
TO-220 |
24548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST |
24+ |
TO220ISOFULLPACK |
8866 |
||||
ST |
2025+ |
TO-220 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ST |
2511 |
TO-247 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
16900 |
公司只做原装，可来电咨询 |
|||
ST |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
ST |
14+PBF |
TO-220 |
310 |
普通 |
|||
ST |
25+ |
TO220 |
2612 |
自家优势产品,欢迎来电咨询! |
|||
STM |
24+ |
TO-220 |
10000 |
VNP35N07规格书下载地址
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2012-11-11
DdatasheetPDF页码索引
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