VNB35N07价格

参考价格:¥14.6985

型号:VNB35N07-E 品牌:STMicroelectronics 备注:这里有VNB35N07多少钱,2025年最近7天走势,今日出价,今日竞价,VNB35N07批发/采购报价,VNB35N07行情走势销售排行榜,VNB35N07报价。
型号 功能描述 生产厂家&企业 LOGO 操作
VNB35N07

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

VNB35N07

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNB35N07

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件:139.31 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNB35N07产品属性

  • 类型

    描述

  • 型号

    VNB35N07

  • 功能描述

    电源开关 IC - 配电 N-Ch 70V 35A OmniFET

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-8-11 16:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
2511
D2PAK-3
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
25+23+
TO263
74011
绝对原装正品现货,全新深圳原装进口现货
ST/意法
22+
TO-263-3
9000
原装正品,支持实单!
ST/意法
24+
TO-263
504014
免费送样原盒原包现货一手渠道联系
ST/意法半导体
21+
D2PAK-3
8860
只做原装,质量保证
ST/意法
25+
D2PAK
65248
百分百原装现货 实单必成
ST
24+
TO-263-3
5000
全新原装正品,现货销售
ST
23+
TO-263-3
296
正规渠道,只有原装!
ST(意法)
25+
5000
只做原装 假一罚百 可开票 可售样
ST
24+
TO-263
2987
只售原装自家现货!诚信经营!欢迎来电!

VNB35N07数据表相关新闻