OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件：139.31 Kbytes Page：13 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路（IC） 配电开关，负载驱动器

MOSFET POWER 70V 35A D2PAK

OMNIFET II全自动保护功率MOSFET

The VNP35N07-E, VNB35N07-E and VNV35NV07-E are monolithic devices made using STMicroelectronics VIPower®technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.\n\n Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in hars • Automotive qualified \n• Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Compatible;

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路（IC） 配电开关，负载驱动器

电源开关 IC - 配电 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP35N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linearcurrent limitation and overvoltage clamp protect the chip in harsh

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件：139.31 Kbytes Page：13 Pages

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件：139.31 Kbytes Page：13 Pages