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VNP35N07-E价格
参考价格：￥11.5763
型号：VNP35N07-E 品牌：STMicroelectronics 备注：这里有VNP35N07-E多少钱，2025年最近7天走势，今日出价，今日竞价，VNP35N07-E批发/采购报价，VNP35N07-E行情走势销售排行榜，VNP35N07-E报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNP35N07-E | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 |   | |
VNP35N07-E | OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | |
VNP35N07-E | 封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET 文件：139.31 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | |
VNP35N07-E产品属性
- 类型
描述
- 型号
VNP35N07-E
- 功能描述
MOSFET N-Ch 70V 35A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-220 |
39500 |
进口原装现货 支持实单价优 |
|||
ST/意法 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
ST/意法半导体 |
22+ |
TO-220-3 |
10000 |
只有原装,原装,假一罚十 |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
|||
ST/意法半导体 |
2511 |
TO-220-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
STMicroelectronics |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
ST(意法) |
24+ |
TO-220 |
24548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
VNP35N07-E规格书下载地址
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2012-11-11
DdatasheetPDF页码索引
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