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VF20150价格
参考价格：￥5.5738
型号：VF20150C-E3/4W 品牌：Vishay 备注：这里有VF20150多少钱，2025年最近7天走势，今日出价，今日竞价，VF20150批发/采购报价，VF20150行情走势销售排行榜，VF20150报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc | VishayVishay Siliconix 威世威世科技公司 |   | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Barrier Schottky Rectifier FEATURES · Low forward voltage drop, low power losses · High efficiency operation APPLICATIONS · high frequency converters · switching powersupplies · freewheeling diodes · OR-ing diode · DC/DCconverters · reverse battery protection | ISC 无锡固电 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.8 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.59 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.8 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：79.47 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Low VF = 0.59 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
肖特基二极管与整流器 20 Amp 150 Volt Dual TrenchMOS | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
整流器 20A,150V,TRENCH SKY RECT. | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 20A 150V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.8 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：77.32 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：152.99 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：143.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 150V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.99 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：149.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：80.22 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：80.22 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：77.31 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.51 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.51 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：80.22 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
20A SCHOTTKY BARRIER RECTIFIERS PRODUCT FEATURES 1. FLAMMABILITY CLASSIFICATION 94V-0 2. EXTREMELY LOW VF 3. LOW STORED CHARGE 4. MAJORITY CARRIER CONDUCTION 5. LOW POWER LOSS/HIGH EFFICIENCY 6. CASE: TRANSFER MOLDED TO-220AB FOR MBR20xxxCT ITO-220AB FOR MBR20xxxFCT 7. DIMENSIONS IN INCHES AND (MILLIMETERS) 8. LEADS: SOL | FRONTIER | | ||
INDUSTRIAL MICROWAVE GENERATORS 2450 MHZ 文件：240.25 Kbytes Page：4 Pages | MKS | | ||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件：778.85 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
LOW VF SCHOTTKY RECTIFIER 文件：62.01 Kbytes Page：3 Pages | PANJIT 強茂 | | ||
LOW VF SCHOTTKY RECTIFIER 文件：72.78 Kbytes Page：4 Pages | PANJIT 強茂 | |
VF20150产品属性
- 类型
描述
- 型号
VF20150
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
TO220F |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY/威世 |
23+ |
TO220F |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
22+ |
TO-220F |
20000 |
只做原装 |
||||
VISHAY/威世 |
15+ |
TO-220F |
560 |
||||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
Vishay(威世) |
25+ |
N/A |
8800 |
公司只做原装,详情请咨询 |
|||
VISHAY |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
VF20150规格书下载地址
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VF20150数据表相关新闻
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