Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

Trench MOS Schottky technology

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：78.8 Kbytes Page：4 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：79.47 Kbytes Page：4 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 150V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管与整流器 20 Amp 150 Volt Dual TrenchMOS

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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整流器 20A,150V,TRENCH SKY RECT.

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 20A 150V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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20A SCHOTTKY BARRIER RECTIFIERS

PRODUCT FEATURES 1. FLAMMABILITY CLASSIFICATION 94V-0 2. EXTREMELY LOW VF 3. LOW STORED CHARGE 4. MAJORITY CARRIER CONDUCTION 5. LOW POWER LOSS/HIGH EFFICIENCY 6. CASE: TRANSFER MOLDED TO-220AB FOR MBR20xxxCT ITO-220AB FOR MBR20xxxFCT 7. DIMENSIONS IN INCHES AND (MILLIMETERS) 8. LEADS: SOL

INDUSTRIAL MICROWAVE GENERATORS 2450 MHZ

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20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

文件：778.85 Kbytes Page：2 Pages

LOW VF SCHOTTKY RECTIFIER

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LOW VF SCHOTTKY RECTIFIER

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