型号 功能描述 生产厂家&企业 LOGO 操作
VF20150S

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.55VatIF=5A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VF20150S

High-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HighVoltageBarrierSchottkyRectifier

FEATURES ·Lowforwardvoltagedrop,lowpowerlosses ·Highefficiencyoperation APPLICATIONS ·highfrequencyconverters ·switchingpowersupplies ·freewheelingdiodes ·OR-ingdiode ·DC/DCconverters ·reversebatteryprotection

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.55VatIF=5A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.57VatIF=5A

UltraLowVF=0.57VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Highefficiencyoperation

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.57VatIF=5A

UltraLowVF=0.57VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifier

文件:77.32 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HighVoltageTrenchMOSBarrierSchottkyRectifier

文件:152.99 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HighVoltageTrenchMOSBarrierSchottkyRectifier

文件:143.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifier

文件:163.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HighVoltageTrenchMOSBarrierSchottkyRectifier

文件:149.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HighVoltageTrenchMOSBarrierSchottkyRectifier

文件:158.99 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifier

文件:80.22 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifier

文件:80.22 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

High-VoltageTrenchMOSBarrierSchottkyRectifier

文件:77.31 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 150V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

High-VoltageTrenchMOSBarrierSchottkyRectifier

文件:163.51 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR) 描述:DIODE SCHOTTKY 20A 150V ITO220AB 分立半导体产品 二极管 - 整流器 - 单

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

High-VoltageTrenchMOSBarrierSchottkyRectifier

文件:80.22 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

20ASCHOTTKYBARRIERRECTIFIERS

PRODUCTFEATURES 1.FLAMMABILITYCLASSIFICATION94V-0 2.EXTREMELYLOWVF 3.LOWSTOREDCHARGE 4.MAJORITYCARRIERCONDUCTION 5.LOWPOWERLOSS/HIGHEFFICIENCY 6.CASE:TRANSFERMOLDEDTO-220ABFORMBR20xxxCTITO-220ABFORMBR20xxxFCT 7.DIMENSIONSININCHESAND(MILLIMETERS) 8.LEADS:SOL

FRONTIER

Frontier Electronics

FRONTIER

INDUSTRIALMICROWAVEGENERATORS2450MHZ

文件:240.25 Kbytes Page:4 Pages

MKS

MKS Instruments.

MKS

20.0AmpereSurfaceMountDualCommonCathodeSchottkyBarrierRectifiers

文件:778.85 Kbytes Page:2 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

LOWVFSCHOTTKYRECTIFIER

文件:62.01 Kbytes Page:3 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

LOWVFSCHOTTKYRECTIFIER

文件:72.78 Kbytes Page:4 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

VF20150S产品属性

  • 类型

    描述

  • 型号

    VF20150S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

更新时间:2024-6-13 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
2020+
TO220F
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
VISHAY
1932+
TO-220F
644
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
23+
TO-220
8600
全新原装现货
VISHAY
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
VISHAY/威世
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
VISHAY-威世
24+25+/26+27+
TO-220-3
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
VISHAY
TO-220F
396379
集团化配单-有更多数量-免费送样-原包装正品现货-正规
VISHAY
1735+
TO220F
6528
科恒伟业!只做原装正品!假一赔十!
VISHAY
23+
TO-TO-220
33500
全新原装真实库存含13点增值税票!
VISHAY/威世
23+
TO-220
10000
公司只做原装正品

VF20150S芯片相关品牌

  • AIMTEC
  • ANPEC
  • AZETTLER
  • BELDEN
  • CYSTEKEC
  • Dialight
  • HONGFA
  • JDSU
  • Rubycon
  • SANYOU
  • SENSORTECHNICS
  • Xicor

VF20150S数据表相关新闻