位置：首页 > IC中文资料第7581页 > VF20150SG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VF20150SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VISHAYVishay Siliconix 威世威世科技公司 |   | |
VF20150SG | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VISHAYVishay Siliconix 威世威世科技公司 | | |
VF20150SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A 分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | |
VF20150SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：80.22 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
VF20150SG | High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.99 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
VF20150SG | High Voltage Trench MOS Barrier Schottky Rectifier 文件：149.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：80.22 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：77.31 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.51 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 150V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.51 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 20A 150V ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：80.22 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Features ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated packa | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Features ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated packa | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Features ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated packa | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Features ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated packa | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Features ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated packa | STMICROELECTRONICS 意法半导体 | |
VF20150SG产品属性
- 类型
描述
- 型号
VF20150SG
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
ITO220A |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
11+ |
TO-220F |
149 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Vishay(威世) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAY/威世 |
25+ |
TO-220F |
12000 |
原装正品真实现货杜绝虚假 |
|||
VISHAY |
24+ |
TO220F |
5000 |
全新原装正品,现货销售 |
|||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
22+ |
TO-220F |
20000 |
只做原装 |
||||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
VF20150SG规格书下载地址
VF20150SG参数引脚图相关
- zigbee模块
- z120
- xtr105
- xl4001
- x86架构
- x606
- wm7
- wimax网络
- wcdma手机
- w5500
- w300
- w230
- w200
- vp5
- voip技术
- viper22a
- viper22
- viper12
- vip12a
- vga接口
- VF25-5X
- VF25-5
- VF25-25
- VF25-20
- VF25-15
- VF25-12
- VF25-10
- VF-24MU
- VF-24LU
- VF-24HU
- VF2-40X
- VF2-40
- VF2-30X
- VF2-30
- VF2-25X
- VF2-25
- VF2-20X
- VF2-15X
- VF2-12X
- VF2-10X
- VF20P10361KHB
- VF20P10331KHB
- VF20P10271KHB
- VF20P10241KHB
- VF20P10221KHB
- VF20P10102KHB
- VF20P10102K
- VF20M120C-M3/4W
- VF20M120C
- VF20200G-E3-4W
- VF20200G-E3/4W
- VF20200G
- VF20200C-E3-4W
- VF20200C-E3/4W
- VF20200C
- VF20150S-M3/4W
- VF20150SG-M3-4W
- VF20150SG-M3/4W
- VF20150SG-E3/4W
- VF20150SG_10
- VF20150S-E3/4W
- VF20150S
- VF20150C-M3-4W
- VF20150C-M3/4W
- VF20150C-E3/4W
- VF20150C_10
- VF20150C
- VF20120S-M3/4W
- VF20120SG-M3-4W
- VF20120SG-M3/4W
- VF20120SG-E3-4W
- VF20120SG-E3/4W
- VF20120SG-E3/45
- VF20120SG_10
- VF20120SG
- VF20120S-E3/4W
- VF20120S-E3/45
- VF20120S
- VF20120C-M3-4W
- VF20120C-M3/4W
- VF2.5
- VF194
- VF-18MU
- VF-18LU
- VF-18HU
- VF16C60
- VF16C50
- VF16C40
- VF16C30
- VF16C20
- VF16C15
- VF16C10
- VF16C05
- VF-12MU
- VF-12LU
- VF-12HU
- VF10C80
- VF10C60
- VF10C50
- VF10C40
VF20150SG数据表相关新闻
VDS1022
优势渠道
2023-6-27VEMI85AA-HGK-GS08
VEMI85AA-HGK-GS08
2023-4-20VDRUS14X385BSE
VDRUS14X385BSE
2021-8-17VHR100+2815D 全系列DC-DC转换器供应
?VHR100+2815D 非常适合军事、航空电子、无人系统以及制造设备和控制中的非飞行关键解决方案。
2021-6-10VHR100+2812D DC-DC转换器 供应
VHR100+2812D 非常适合军事、航空电子、无人系统以及制造设备和控制中的非飞行关键解决方案。
2021-6-10vH5MS1G22MFP-J3
H5MS1G22MFP-J3
2019-9-25
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
