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型号	功能描述	生产厂家企业	LOGO
VB20120S	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3	Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter	ISC 无锡固电	ISC
VB20120S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3SLASH8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3SLASH8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-M3	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-M3_V01	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-M3	Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter	ISC 无锡固电	ISC
VB20120S-M3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-M3SLASH8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3	High Voltage Trench MOS Barrier Schottky Rectifier 文件：150.35 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3/4W	肖特基二极管与整流器 20 Amp 120 Volt Single TrenchMOS	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3/8W	封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件描述：DIODE SCHOTTKY 120V 20A TO263AB 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
VB20120S-E3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-E3SLASH8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.09 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3/4W	封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：带盒（TB）描述：DIODE SCHOTTKY 120V 20A TO263AB 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
VB20120SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3-8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-E3SLASH8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-M3	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120SG-M3	High efficiency operation 文件：88.15 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-M3	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：100.46 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-M3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：100.46 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-M3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：100.46 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB20120S-M3_15	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.17 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
AOK20120XSD	1200 V αSiC Silicon Carbide Schottky Barrier Diode Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr	AOSMD 万国半导体	AOSMD
CBD20120LCT	LOW VF SCHOTTKY RECTIFIER 文件：52.63 Kbytes Page：2 Pages	PANJIT 強茂	PANJIT
CBD20120UFCT	LOW VF SCHOTTKY RECTIFIER 文件：71.1 Kbytes Page：4 Pages	PANJIT 強茂	PANJIT
CBD20120VCT	Ultra low forward voltage drop, low power loss 文件：98.01 Kbytes Page：4 Pages	PANJIT 強茂	PANJIT
CBD20120VDC	Ultra low forward voltage drop, low power loss 文件：67.95 Kbytes Page：4 Pages	PANJIT 強茂	PANJIT

VB20120S产品属性

类型
描述
型号
VB20120S
制造商
VISHAY
制造商全称
Vishay Siliconix
功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier

VB20120S供应商更多...

更新时间：2025-11-21 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金芯世纪电子有限公司	VB20120SG-E3	VISHAY/威世	22+	TO-263	100000	代理渠道/只做原装/可含税	询价
贸泽芯城（深圳）电子科技有限公司	VB20120S-M3/8W	VISHAY/威世	23+	TO-263AB	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市美思瑞电子科技有限公司	VB20120S-M3/4W	VISHAY/威世	22+	TO-263AB	82000	现货,原厂原装假一罚十!	询价
深圳市诺美思科技有限公司	VB20120SG	VISHAY		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市宏捷佳电子科技有限公司	VB20120S-E3/8W	Vishay General Semiconductor -	25+	TO-263AB(D?PAK)	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市河锋鑫科技有限公司	VB20120SG-E3	VIS	22+	TO-263AB	6000	十年配单,只做原装	询价
深圳市威尔健半导体有限公司	VB20120SG	TOSHIBA/东芝	23+	SOP-8	69820	终端可以免费供样,支持BOM配单!	询价
现代芯城（深圳）科技有限公司	VB20120S-E3/4W		24+	N/A	52000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市科雨电子有限公司	VB20120SG-E3/4W	VISHAY	25+	TO-263	3675	就找我吧!--邀您体验愉快问购元件!	询价

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VB20120S产品属性

VB20120S供应商更多...

VB20120S芯片相关品牌

VB20120S规格书下载地址

VB20120S参数引脚图相关

VB20120S数据表相关新闻

VBPW34VR

VAWQ6-Q48-D15H

VBE5415

VBE2104N

VAS1260

V962PBC-33LP

DdatasheetPDF页码索引