P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA652TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The μPA652TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power s

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

ROHS CERTIFICATE OF COMPLIANCE

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Optical Isolation

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MINIATURE FUSEHOLDERS

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횠12.7mm mounting Product will operate over a wide voltage range

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10 TO 600 MHz TO-8 CASCADABLE AMPLIFIER

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