RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

NPN Silicon RF Power Transistors

NPN Silicon RF Power Transistors

Trans GP BJT NPN 16V 2A 3-Pin NI-200Z

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 26 volt base station equipment. • Speci

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

NPN Silicon RF Power Transistors

NPN Silicon RF Power Transistors

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz. FEATURES: • Common Emitter • PG = 10 dB at 5.0 W/512 MHz • Omnigold™ Metalization System

960 MHz, 5.0 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

960 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

RF Power Field Effect Transistor

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RF Power Field Effect Transistor

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RF Power Field Effect Transistor

文件：510.8 Kbytes Page：8 Pages

RF Power Field Effect Transistor

文件：332.8 Kbytes Page：12 Pages

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：342.04 Kbytes Page：10 Pages

RF Power Field Effect Transistor

文件：332.8 Kbytes Page：12 Pages

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：342.04 Kbytes Page：10 Pages

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

Octal bus transceiver/register; 3-state

DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52