MRF652价格
参考价格：￥252.8253
型号：MRF652S 品牌：ASI 备注：这里有MRF652多少钱，2026年最近7天走势，今日出价，今日竞价，MRF652批发/采购报价，MRF652行情走势销售排行榜，MRF652报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF652 | NPN Silicon RF Power Transistors NPN Silicon RF Power Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
MRF652 | RF POWER TRANSISTORS NPN SILICON The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 ( | MOTOROLA 摩托罗拉 | | |
MRF652 | Trans GP BJT NPN 16V 2A 3-Pin NI-200Z | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
960 MHz, 5.0 W, 26 V Lateral N-Channel Broadband RF Power MOSFET | ETC 知名厂家 | ETC | | |
960 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET | ETC 知名厂家 | ETC | | |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 26 volt base station equipment. • Speci | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz. FEATURES: • Common Emitter • PG = 10 dB at 5.0 W/512 MHz • Omnigold™ Metalization System | ASI | | ||
RF POWER TRANSISTORS NPN SILICON The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 ( | MOTOROLA 摩托罗拉 | | ||
NPN Silicon RF Power Transistors NPN Silicon RF Power Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
RF Power Field Effect Transistor 文件：332.8 Kbytes Page：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：510.8 Kbytes Page：8 Pages | MOTOROLA 摩托罗拉 | | ||
RF Power Field Effect Transistor 文件：332.8 Kbytes Page：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：510.8 Kbytes Page：8 Pages | MOTOROLA 摩托罗拉 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：342.04 Kbytes Page：10 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：332.8 Kbytes Page：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：342.04 Kbytes Page：10 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A | POINN | | ||
Octal bus transceiver/register; 3-state DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab | PHILIPS 飞利浦 | | ||
DIFFERENTIAL VARIABLE GAIN AMPLIFIER DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52 | STMICROELECTRONICS 意法半导体 | |
MRF652产品属性
- 类型
描述
- Output Power：
5W
- Number of Elements per Chip：
1
- Minimum Operating Temperature：
-65°C
- Minimum DC Current Gain：
10@200mA@5V
- Maximum Transition Frequency：
512MHz
- Maximum Operating Temperature：
200°C
- Maximum Emitter Base Voltage：
4V
- Maximum DC Collector Current：
2A
- Maximum Collector Emitter Voltage：
16V
- Maximum Collector Base Voltage：
36V
- Material：
Si
- Configuration：
Single Dual Emitter
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
25+ |
TO-63~ |
9630 |
我们只做原装正品现货!量大价优! |
|||
MOTOROLA/摩托罗拉 |
SMD-2 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
MOTOROLA/摩托罗拉 |
2450+ |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
||||
MOTOROLA/摩托罗拉 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
MOT |
0304/0250 |
GAOPIN |
13 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOTOROLA/摩托罗拉 |
24+ |
SMD-2 |
9600 |
原装现货,优势供应,支持实单! |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-63 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Motorola |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
MOT |
25+ |
2789 |
全新原装自家现货!价格优势! |
||||
MOTOROLA/摩托罗拉 |
20+ |
原装 |
67500 |
原装优势主营型号-可开原型号增税票 |
MRF652规格书下载地址
MRF652参数引脚图相关
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