P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The μPA652TT is a switching device, which can be driven directly by a

2.5 V power source.

This device features a low on-state resistance and excellent switching

characteristics, and is suitable for applications such as power switch of

portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

RDS(on)1 = 294 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A)

RDS(on)2 = 336 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A)

RDS(on)3 = 514 mΩ MAX. (VGS = −2.5 V, ID = −0.5 A)