丝印代码：HCT652；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

Operating Voltage Range of 4.5 V to 5.5 V Low Power Consumption, 80-μA Max ICC Typical tpd = 12 ns 6-mA Output Drive at 5 V Low Input Current of 1 μA Max Inputs Are TTL-Voltage Compatible Independent Registers and Enables for A and B Buses Multiplexed Real-Time and Stored Data True Data P

丝印代码：HCT652；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

Operating Voltage Range of 4.5 V to 5.5 V Low Power Consumption, 80-μA Max ICC Typical tpd = 12 ns 6-mA Output Drive at 5 V Low Input Current of 1 μA Max Inputs Are TTL-Voltage Compatible Independent Registers and Enables for A and B Buses Multiplexed Real-Time and Stored Data True Data P

丝印代码：HCT652；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

Operating Voltage Range of 4.5 V to 5.5 V Low Power Consumption, 80-μA Max ICC Typical tpd = 12 ns 6-mA Output Drive at 5 V Low Input Current of 1 μA Max Inputs Are TTL-Voltage Compatible Independent Registers and Enables for A and B Buses Multiplexed Real-Time and Stored Data True Data P

Octal bus transceiver/register; 3-state

DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab

Octal bus transceiver/register; 3-state

丝印代码：HCT652M；High-Speed CMOS Logic Octal-Bus Transceiver/Registers, Three-State

[ /Title (CD74HC652, CD74HCT652) /Subject (High-Speed CMOS Logic Octal-Bus Transceiver/Registers, Three-State) /Author () /Keywords () /Creator () /DOCINFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark Features • CD74HC652, CD74HCT652 . . . . . . . . . . . Non-Inverting • Independen

丝印代码：HCT652M；High-Speed CMOS Logic Octal-Bus Transceiver/Registers, Three-State

[ /Title (CD74HC652, CD74HCT652) /Subject (High-Speed CMOS Logic Octal-Bus Transceiver/Registers, Three-State) /Author () /Keywords () /Creator () /DOCINFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark Features • CD74HC652, CD74HCT652 . . . . . . . . . . . Non-Inverting • Independen

SPI 接口的单通道、24 位高精度 ADC 芯片

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52