MOSFETs Silicon N-channel MOS

Applications • ORing Circuits • Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 4.5 V) (2) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)

MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 16 nC (typ.) (3) Small output charge: Qoss = 74 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.77 mΩ (typ.) (VGS = 10 V) (5) Low leakag

Power MOSFET (N-ch single VDSS 30V)

Power MOSFET (N-ch single VDSS 30V)

Silicon N-channel MOS (U-MOS-H)

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Power MOSFET (N-ch single VDSS≤30V)

NAND GATES/HEX INVERTERS

DESCRIPTION - The 8002, 9003, 9004, 9007, and 9012 are active LOW level output AND gates commonly know as NAND gates. The 9016 and 9017 are hex inverters with input and output characteristics identical to a NAND gate.

Heyco® Self-Closing Braided Sleeving

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Toggle Switches

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Toggle Switches

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Toggle Switches

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