MOSFETs Silicon N-channel MOS

Applications • ORing Circuits • Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 4.5 V) (2) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)

Power MOSFET (N-ch single VDSS 30V)

NAND GATES/HEX INVERTERS

DESCRIPTION - The 8002, 9003, 9004, 9007, and 9012 are active LOW level output AND gates commonly know as NAND gates. The 9016 and 9017 are hex inverters with input and output characteristics identical to a NAND gate.

Heyco® Self-Closing Braided Sleeving

文件：184.28 Kbytes Page：1 Pages

Toggle Switches

文件：67.82 Kbytes Page：1 Pages

Toggle Switches

文件：67.82 Kbytes Page：1 Pages

Toggle Switches

文件：67.82 Kbytes Page：1 Pages