竊큀SHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) • High-speed switching. • Small gate charge.: QSW ＝ 11 nC(Typ.) • Low drain-source ON-resistance: RDS (ON) = 4.3

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

Axial General Purpose Plastic Rectifier

FEATURES · Low coat construction · Low forward voltage drop · Low reverse leakage · High forward surge current capability · High temperature soldering guaranteed: 260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tension

Glass Passivated Efficient Fast Recovery Rectifier

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Glass Passivated Standard Rectifier

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Glass Passivated Super Fast Recovery Rectifier

文件：817.34 Kbytes Page：2 Pages

Glass Passivated Super Fast Recovery Rectifier

文件：48.09 Kbytes Page：2 Pages