High-Efficiency DC/DC Converter Applications

Notebook PC Applications

Portable-Equipment Applications

• Built-in schottky barrier diode

Low forward voltage: VDSF = 0.6V(Max.)

• High-speed switching.

• Small gate charge.: QSW ＝ 11 nC(Typ.)

• Low drain-source ON-resistance: RDS (ON) = 4.3 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 40 S (typ.)

• Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)

• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)