PFM/PWM Step-Up DC/DC Controller

General Description The TC110 is a step-up (Boost) switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at lo

PFM/PWM Step-Up DC/DC Controller

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PFM/PWM Step-Up DC/DC Converter

SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Bi-Directional VDRM - 58 to 320 Volts IPP - 100 Amperes FEATURES ● Oxide Glass Passivated Junction ● Bidirectional protection in a single device ● Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us ● High off state Impedance and low on state voltage ● Plastic material has UL flammab

Low Noise and Medium Power GaAs FETs

[TRANSCOM] DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applicatio

Low Noise and Medium Power GaAs FETs

DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including

Low Noise and Medium Power GaAs FETs

DESCRIPTION The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All d

Super Low Noise GaAs FETs

DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 30 GHz and suitable for low noise application including a wide range of commercial and military applica

SMD Telecoil 10.5x1.4x2mm

SMD Telecoil 10.5x1.4x2mm

SMD Telecoil 10.5x1.4x2mm

PFM/PWM Step-Up DC/DC Controller

General Description The TC110 is a step-up (Boost) switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at lo

PFM/PWM Step-Up DC/DC Controller

General Description The TC110 is a step-up (Boost) switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at lo

PFM/PWM Step-Up DC/DC Controller

General Description The TC110 is a step-up (Boost) switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at lo

PFM/PWM Step-Up DC/DC Controller

General Description The TC110 is a step-up (Boost) switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at lo

PFM/PWM Step-Up DC/DC Controller

General Description The TC110 is a step-up (Boost) switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at lo

PFM/PWM Step-Up DC/DC Controller

General Description The TC110 is a step-up (Boost) switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at lo

TOROID INDUCTORS

FEATURE 1. Useful in a wide variety of power conversion and line filter applications 2. Wound on Iron Powder material toroids 3. High saturation current 4. Coated with varnish 5. Inductance range : 1.0uH to 10000uH APPLICATIONS 1. Power supplies 2. Swithing Circuits 3. SCR and Triac Contr

300mA CMOS LDO with Shutdown and VREF Bypass

General Description The TC1107 is a fixed output, high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). TC1107 key features include ultra low noise operation (

300mA CMOS LDO with Shutdown and VREF Bypass

General Description The TC1107 is a fixed output, high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). TC1107 key features include ultra low noise operation (

300mA CMOS LDO with Shutdown and VREF Bypass

General Description The TC1107 is a fixed output, high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). TC1107 key features include ultra low noise operation (

300mA CMOS LDO

General Description The TC1108 is a fixed output, high accuracy (typically ±0.5) CMOS low dropout regulator. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). Features • Extremely Low Supply Current (50A, Typ.) • Very Low Dropout

300mA CMOS LDO

General Description The TC1108 is a fixed output, high accuracy (typically ±0.5) CMOS low dropout regulator. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). Features • Extremely Low Supply Current (50A, Typ.) • Very Low Dropout

300mA CMOS LDO

General Description The TC1108 is a fixed output, high accuracy (typically ±0.5) CMOS low dropout regulator. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). Features • Extremely Low Supply Current (50A, Typ.) • Very Low Dropout

300mA CMOS LDO

General Description The TC1108 is a fixed output, high accuracy (typically ±0.5) CMOS low dropout regulator. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). Features • Extremely Low Supply Current (50A, Typ.) • Very Low Dropout

300mA CMOS LDO

General Description The TC1108 is a fixed output, high accuracy (typically ±0.5) CMOS low dropout regulator. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). Features • Extremely Low Supply Current (50A, Typ.) • Very Low Dropout

300mA CMOS LDO

General Description The TC1108 is a fixed output, high accuracy (typically ±0.5) CMOS low dropout regulator. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). Features • Extremely Low Supply Current (50A, Typ.) • Very Low Dropout

300mA CMOS LDO

General Description The TC1108 is a fixed output, high accuracy (typically ±0.5) CMOS low dropout regulator. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). Features • Extremely Low Supply Current (50A, Typ.) • Very Low Dropout

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

50K gates/D.6ns. Compact and powerful!

General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2-

STANDARD SHAFT SEALS

DESCRIPTION The TC profile is a shaft seal composed of a single metal cage with a rubber coating, a primary sealing lip with integrated spring and an additional anti-pollution lip. APPLICATIONS Shaft sealing Engines Pumps Transmissions

STANDARD SHAFT SEALS

DESCRIPTION The TC profile is a shaft seal composed of a single metal cage with a rubber coating, a primary sealing lip with integrated spring and an additional anti-pollution lip. APPLICATIONS Shaft sealing Engines Pumps Transmissions

STANDARD SHAFT SEALS

DESCRIPTION The TC profile is a shaft seal composed of a single metal cage with a rubber coating, a primary sealing lip with integrated spring and an additional anti-pollution lip. APPLICATIONS Shaft sealing Engines Pumps Transmissions