您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第3906页 > TC110

TC110价格

参考价格：￥9.2581

型号：TC1102 品牌：Thomas & Betts 备注：这里有TC110多少钱，2025年最近7天走势，今日出价，今日竞价，TC110批发/采购报价，TC110行情走势销售排行榜，TC110报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TC110

PFM/PWMStep-UpDC/DCController

GeneralDescription TheTC110isastep-up(Boost)switchingcontrollerthatfurnishesoutputcurrentsofupto300mAwhiledeliveringatypicalefficiencyof84.TheTC110normallyoperatesinpulsewidthmodulationmode(PWM),butautomaticallyswitchestopulsefrequencymodulation(PFM)atlo

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC110

PFM/PWMStep-UpDC/DCController

文件：465.55 Kbytes Page：16 Pages

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1100H

SURFACEMOUNTTHYRISTORSURGEPROTECTIVEDEVICE

Bi-Directional VDRM-58to320Volts IPP-100Amperes FEATURES ●OxideGlassPassivatedJunction ●Bidirectionalprotectioninasingledevice ●Surgecapabilitiesupto100A@10/1000usor400@8/20us ●HighoffstateImpedanceandlowonstatevoltage ●PlasticmaterialhasULflammab

LITEONLite-On Technology Corporation

光宝科技光宝科技股份有限公司

LITEON
TC1101

LowNoiseandMediumPowerGaAsFETs

[TRANSCOM] DESCRIPTION TheTC1101isaGaAsPseudomorphicHighElectronMobilityTransistor(PHEMT)chip,whichhasverylownoisefigure,highassociatedgainandhighdynamicrange.Thedevicecanbeusedincircuitsupto40GHzandsuitableforlownoiseandmediumpoweramplifierapplicatio

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
TC1101

LowNoiseandMediumPowerGaAsFETs

DESCRIPTION TheTC1101isaGaAsPseudomorphicHighElectronMobilityTransistor(PHEMT)chip,whichhasverylownoisefigure,highassociatedgainandhighdynamicrange.Thedevicecanbeusedincircuitsupto30GHzandsuitableforlownoiseandmediumpoweramplifierapplicationsincluding

TRANSCOMTranscom, Inc.

全讯科技

TRANSCOM
TC1101V

LowNoiseandMediumPowerGaAsFETs

DESCRIPTION TheTC1101VisthesameasTC1101expectviaholesinthesourcepadsforreducingthegroundinginductance.Itcanbeusedincircuitsupto30GHzandsuitableforlownoiseandmediumpoweramplifierapplicationincludingawiderangeofcommercialandmilitaryapplication.Alld

TRANSCOMTranscom, Inc.

全讯科技

TRANSCOM
TC1102

SuperLowNoiseGaAsFETs

DESCRIPTION TheTC1102isaGaAsPseudomorphicHighElectronMobilityTransistor(PHEMT)chip,whichhasverylownoisefigureandhighassociatedgain.Thedevicecanbeusedincircuitsupto30GHzandsuitableforlownoiseapplicationincludingawiderangeofcommercialandmilitaryapplica

TRANSCOMTranscom, Inc.

全讯科技

TRANSCOM
TC1102

SMDTelecoil10.5x1.4x2mm

PREMOPREMO CORPORATION S.L

普莱默

PREMO
TC1102-35000J

SMDTelecoil10.5x1.4x2mm

PREMOPREMO CORPORATION S.L

普莱默

PREMO
TC1102-46000J

SMDTelecoil10.5x1.4x2mm

PREMOPREMO CORPORATION S.L

普莱默

PREMO
TC110301ECT

PFM/PWMStep-UpDC/DCController

GeneralDescription TheTC110isastep-up(Boost)switchingcontrollerthatfurnishesoutputcurrentsofupto300mAwhiledeliveringatypicalefficiencyof84.TheTC110normallyoperatesinpulsewidthmodulationmode(PWM),butautomaticallyswitchestopulsefrequencymodulation(PFM)atlo

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC110303ECT

PFM/PWMStep-UpDC/DCController

GeneralDescription TheTC110isastep-up(Boost)switchingcontrollerthatfurnishesoutputcurrentsofupto300mAwhiledeliveringatypicalefficiencyof84.TheTC110normallyoperatesinpulsewidthmodulationmode(PWM),butautomaticallyswitchestopulsefrequencymodulation(PFM)atlo

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC110331ECT

PFM/PWMStep-UpDC/DCController

GeneralDescription TheTC110isastep-up(Boost)switchingcontrollerthatfurnishesoutputcurrentsofupto300mAwhiledeliveringatypicalefficiencyof84.TheTC110normallyoperatesinpulsewidthmodulationmode(PWM),butautomaticallyswitchestopulsefrequencymodulation(PFM)atlo

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC110333ECT

PFM/PWMStep-UpDC/DCController

GeneralDescription TheTC110isastep-up(Boost)switchingcontrollerthatfurnishesoutputcurrentsofupto300mAwhiledeliveringatypicalefficiencyof84.TheTC110normallyoperatesinpulsewidthmodulationmode(PWM),butautomaticallyswitchestopulsefrequencymodulation(PFM)atlo

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC110501ECT

PFM/PWMStep-UpDC/DCController

GeneralDescription TheTC110isastep-up(Boost)switchingcontrollerthatfurnishesoutputcurrentsofupto300mAwhiledeliveringatypicalefficiencyof84.TheTC110normallyoperatesinpulsewidthmodulationmode(PWM),butautomaticallyswitchestopulsefrequencymodulation(PFM)atlo

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC110503ECT

PFM/PWMStep-UpDC/DCController

GeneralDescription TheTC110isastep-up(Boost)switchingcontrollerthatfurnishesoutputcurrentsofupto300mAwhiledeliveringatypicalefficiencyof84.TheTC110normallyoperatesinpulsewidthmodulationmode(PWM),butautomaticallyswitchestopulsefrequencymodulation(PFM)atlo

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1106D-120M

TOROIDINDUCTORS

FEATURE 1.Usefulinawidevarietyofpowerconversionandlinefilterapplications 2.WoundonIronPowdermaterialtoroids 3.Highsaturationcurrent 4.Coatedwithvarnish 5.Inductancerange:1.0uHto10000uH APPLICATIONS 1.Powersupplies 2.SwithingCircuits 3.SCRandTriacContr

PRODUCTWELL

Productwell Precision Elect.CO.,LTD

PRODUCTWELL
TC1107

300mACMOSLDOwithShutdownandVREFBypass

GeneralDescription TheTC1107isafixedoutput,highaccuracy(typically±0.5)CMOSupgradeforolder(bipolar)lowdropoutregulators.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). TC1107keyfeaturesincludeultralownoiseoperation(

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1107

300mACMOSLDOwithShutdownandVREFBypass

GeneralDescription TheTC1107isafixedoutput,highaccuracy(typically±0.5)CMOSupgradeforolder(bipolar)lowdropoutregulators.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). TC1107keyfeaturesincludeultralownoiseoperation(

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1107-3.3VUA

300mACMOSLDOwithShutdownandVREFBypass

GeneralDescription TheTC1107isafixedoutput,highaccuracy(typically±0.5)CMOSupgradeforolder(bipolar)lowdropoutregulators.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). TC1107keyfeaturesincludeultralownoiseoperation(

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1108

300mACMOSLDO

GeneralDescription TheTC1108isafixedoutput,highaccuracy(typically±0.5)CMOSlowdropoutregulator.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). Features •ExtremelyLowSupplyCurrent(50A,Typ.) •VeryLowDropout

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1108-25VDB

300mACMOSLDO

GeneralDescription TheTC1108isafixedoutput,highaccuracy(typically±0.5)CMOSlowdropoutregulator.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). Features •ExtremelyLowSupplyCurrent(50A,Typ.) •VeryLowDropout

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1108-28VDB

300mACMOSLDO

GeneralDescription TheTC1108isafixedoutput,highaccuracy(typically±0.5)CMOSlowdropoutregulator.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). Features •ExtremelyLowSupplyCurrent(50A,Typ.) •VeryLowDropout

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1108-3.3VDBTR

300mACMOSLDO

GeneralDescription TheTC1108isafixedoutput,highaccuracy(typically±0.5)CMOSlowdropoutregulator.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). Features •ExtremelyLowSupplyCurrent(50A,Typ.) •VeryLowDropout

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1108-30VDB

300mACMOSLDO

GeneralDescription TheTC1108isafixedoutput,highaccuracy(typically±0.5)CMOSlowdropoutregulator.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). Features •ExtremelyLowSupplyCurrent(50A,Typ.) •VeryLowDropout

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1108-33VDB

300mACMOSLDO

GeneralDescription TheTC1108isafixedoutput,highaccuracy(typically±0.5)CMOSlowdropoutregulator.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). Features •ExtremelyLowSupplyCurrent(50A,Typ.) •VeryLowDropout

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC1108-50VDB

300mACMOSLDO

GeneralDescription TheTC1108isafixedoutput,highaccuracy(typically±0.5)CMOSlowdropoutregulator.Totalsupplycurrentistypically50Aatfullload(20to60timeslowerthaninbipolarregulators). Features •ExtremelyLowSupplyCurrent(50A,Typ.) •VeryLowDropout

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TC110G

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G03

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-03

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G05

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-05

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G08

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-08

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G11

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-11

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G14

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-14

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G17

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-17

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G21

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-21

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G26

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-26

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G32

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-32

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G38

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-38

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G51

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-51

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G75

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-75

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110GA0

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-AO

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110GC9

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110G-C9

50Kgates/D.6ns.Compactandpowerful!

General ToshibaCMOSGateArrayfamily,TC11OGSeries, withinterconnectroutingwhichisnotconfinedto routingchannels.Thistechniqueincreasessilicon efficiency(functions/mm2 ). HigherdensityandToshibaHC2MOSprocess providesubnanosecondspeedsof0.6nstypicalgate delays(2-

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TC110X125X12

STANDARDSHAFTSEALS

DESCRIPTION TheTCprofileisashaftseal composedofasinglemetalcage witharubbercoating,aprimary sealinglipwithintegratedspringand anadditionalanti-pollutionlip. APPLICATIONS Shaftsealing Engines Pumps Transmissions

FRANCEJOINT

France Joint

FRANCEJOINT
TC110X130X12

STANDARDSHAFTSEALS

DESCRIPTION TheTCprofileisashaftseal composedofasinglemetalcage witharubbercoating,aprimary sealinglipwithintegratedspringand anadditionalanti-pollutionlip. APPLICATIONS Shaftsealing Engines Pumps Transmissions

FRANCEJOINT

France Joint

FRANCEJOINT
TC110X130X13

STANDARDSHAFTSEALS

DESCRIPTION TheTCprofileisashaftseal composedofasinglemetalcage witharubbercoating,aprimary sealinglipwithintegratedspringand anadditionalanti-pollutionlip. APPLICATIONS Shaftsealing Engines Pumps Transmissions

FRANCEJOINT

France Joint

FRANCEJOINT
TC110X130X14

STANDARDSHAFTSEALS

DESCRIPTION TheTCprofileisashaftseal composedofasinglemetalcage witharubbercoating,aprimary sealinglipwithintegratedspringand anadditionalanti-pollutionlip. APPLICATIONS Shaftsealing Engines Pumps Transmissions

FRANCEJOINT

France Joint

FRANCEJOINT

TC110产品属性

  • 类型

    描述

  • 型号

    TC110

  • 制造商

    Baumer Electric Ag

  • 制造商

    Datak Corporation

TC110供应商更多...

更新时间：2025-7-12 13:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市汇莱威科技有限公司
TC1108-3.3VDBTR
MICROCHIP(美国微芯)
24+
SOT-223-3
541200
免费送样原盒原包现货一手渠道联系
询价
深圳市坤融电子科技有限公司
TC1102
BCD
24+
SOP8
5772
只做原厂渠道 可追溯货源
询价
深圳市正纳电子有限公司
TC1108-3.3VDBTR
MICROCHIP
ROHS+Original
NA
16127
专业电子元器件供应链/QQ 350053121 /正纳电子
询价
上海鑫科润电子科技有限公司
TC110G21AF-0239
TOSHIBA
1998
QFP
355
原装现货海量库存欢迎咨询
询价
深圳市弘为电子有限公司
TC110G51AF-0139
TOS
24+
QFP
6
原装现货假一罚十
询价
深圳市硅宇电子有限公司
TC1108-3.3VDBTR
Microchip(微芯)
2324+
Microchip(微芯)
78920
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口
询价
深圳市朱博士电子科技有限公司
TC1107-2.8VOA
MICROCHIP
2405+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
深圳市博中泰实业有限公司
TC1108-5.0VDBTR
MICROCHIP/微芯
24+
SOT223
60000
询价
深圳市华睿芯科技有限公司
TC1107-3.0VUA
MICROCHIP
24+
MSOP-8
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市宇创芯科技有限公司
TC1107-2.8VUATR
MICROCHIP/微芯
24+
MSOP-8
9600
原装现货,优势供应,支持实单!
询价

TC110芯片相关品牌

  • CAMDENBOSS
  • CHERRY
  • HOLTIC
  • ISSI
  • JAE
  • Micrel
  • PEAK
  • pulse
  • SEMTECH_ELEC
  • SPSEMI
  • UTC
  • YEASHIN

TC110规格书下载地址

TC110参数引脚图相关

TC110数据表相关新闻

  • TC1-1+

    进口代理

    2023-3-21

  • TC1055-2.8VCT713

    TC1055-2.8VCT713其它类型稳压器（线性稳压控制器）MICROCHIP封装SOT23-5

    2022-7-15

  • TC1055-2.85VCT713

    TC1055-2.85VCT713电源管理芯片MICROCHIP/微芯封装SOT23-5

    2022-7-15

  • TC1-1-13M+

    50OhmsBalunSMD/SMT音频变压器/信号变压器,T1//E1/CEPT/ISDN-Pri音频变压器/信号变压器,500kHzto1GHz音频变压器/信号变压器,50Ohms音频变压器/信号变压器,1000Base-T2Channel音频变压器/信号变压器,20Hzto20kHzTerminals音频变压器/信号变压

    2020-12-1

  • TC1108-2.5VDBTR，TC110G32AF-0075，TC1121CPA，TC1121EOA，

    TC1108-2.5VDBTR，TC110G32AF-0075，TC1121CPA，TC1121EOA，

    2020-3-23

  • TC1108-300毫安的CMOS LDO

    概述TC1108是一个固定的输出，精度高（通常±0.5％）的CMOS低压差稳压器。总供给电流的典型值50μA在满负荷（20至60倍低于双极型稳压器）。TC1108的主要特性包括超低噪音运行，非常低的压差电压（通常在240mV满负荷），和快速响应，以加强对负荷变化。TC1108采用过热和过电流保护。TC1108与稳定仅1μF的输出电容器和有一个最大的输出电流为300mA。它是提供采用SOT-223包。特点•极低的电源电流（50μA，典型值。）•非常低的电压差•300m

    2013-1-11

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示