Low Noise and Medium Power GaAs FETs

DESCRIPTION The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All d

FET Chip

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Integrated Circuit General Purpose Amp, Mixer, and Oscillator

Features: • General Amplifier Circuit • High Frequency Amplifier • Mixer, OSC and Modulator • Video Amplifier • Recommend RF and IF Amplifier (f = 0 to 100MHz) • AGC is possible

Universal sync generator USG

GENERAL DESCRIPTION The SAA1101 is a Universal Sync Generator (USG) and is designed for application in video sources such as cameras, film scanners, video generators and associated apparatus. The circuit can be considered as a successor to the SAA1043 sync generator and the SAA1044 subcarrier cou

WIDE BAND AGC AMPLIFIER GaAs MMIC

文件：337.64 Kbytes Page：15 Pages