32K x 32 SRAM

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ➤ V FT pin for us

32K x 32 SRAM

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ➤ V FT pin for us

32K x 32 SRAM

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ➤ V FT pin for us

64K x 32 SRAM?

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ■ Fast A

64K x 32 SRAM?

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ■ Fast A

64K x 32 SRAM?

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ■ Fast A

64K x 32 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM inte

64K x 32 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM inte

64K x 32 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM inte

64K x 64 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access ti

64K x 64 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access ti

64K x 64 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access ti

64K x 32 SRAM

64K x 32 SRAM

0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter