GENERAL DESCRIPTION

The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

FEATURES

■ Fast Access times: 4.5, 5, 6, 7, and 8ns

■ Fast clock speed: 125,100, 83, 66, and 50 MHz

■ Provide high performance 3-1-1-1 access rate

■ Fast OE access times: 4.5, 5 and 6ns

■ Single 3.3V +10/-5 power supply

■ Common data inputs and data outputs

■ BYTE WRITE ENABLE and GLOBAL WRITE control

■ Three chip enables for depth expansion and address pipelining

■ Address, control, input, and output pipelined registers

■ Internally self-timed WRITE CYCLE

■ WRITE pass-through capability

■ Burst control pins ( interleaved or linear burst sequence)

■ High density, high speed packages

■ Low capacitive bus loading

■ High 30pF output drive capability at rated access time

■ SNOOZE MODE for reduced power standby

■ Single cycle disable ( PentiumTM BSRAM compatible )