32K x 32 SRAM

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ➤ V FT pin for us

32K x 32 SRAM

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ➤ V FT pin for us

32K x 32 SRAM

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ➤ V FT pin for us

0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode