GENERAL DESCRIPTION

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

FEATURES

➤ V FT pin for user configurable pipeline or flow-through operation.

➤ V1 Fast Access times:

- Pipeline – 3.8 / 4 / 4.5 ns

- Flow-through – 9 / 10 / 11ns

➤ V Single 3.3V +0.3V/-0.165V power supply

➤ V Common data inputs and data outputs

➤ V Individual BYTE WRITE ENABLE and GLOBAL WRITE control

➤ V Three chip enables for depth expansion and address pipelining

➤ V Clock-controlled and registered address, data I/Os and control signals

➤ V Internally self-timed WRITE CYCLE

➤ V Burst control pins ( interleaved or linear burst sequence)

➤ V High 30pF output drive capability at rated access time

➤ V SNOOZE MODE for reduced power standby

➤ V Burst Sequence :

- Interleaved (MODE=NC or VCC)