Features

• AEC-Q101 qualified

• Very fast and robust intrinsic body diode

• Extremely low gate charge and input capacitance

• Very high operating junction temperature capability (TJ = 200 °C)

Applications

• Main inverter (electric traction)

• DC/DC converter for EV/HEV

• On board charger (OBC)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2nd generation SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.