Features

• AEC-Q101 qualified

• High speed switching performance

• Very fast and robust intrinsic body diode

• Low capacitances

• Very high operating junction temperature capability (TJ = 200 °C)

Applications

• DC-DC converters

• Solar Inverters and renewable energy

• SMPS

• OBC

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material allow designers to use an

industry-standard outline with significantly improved thermal capability. These

features render the device perfectly suitable for high-efficiency and high power

density applications.