Features

• Very high operating junction temperature capability (TJ = 200 °C)

• Very fast and robust intrinsic body diode

• Extremely low gate charge and input capacitances

Applications

• Switching applications

• Power supply for renewable energy systems

• High frequency DC-DC converters

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2nd generation SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.