Features

• AEC-Q101 qualified

• Very fast and robust intrinsic body diode

• Low capacitance

Applications

• Switching mode power supply

• EV chargers

• DC-DC converters

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2nd generation SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.