| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 |   | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
超结MOS功率管 | SILAN 士兰微 | | ||
D-Well系列超级结高压MOSFET | SILAN 士兰微 | | ||
D-Well系列超级结高压MOSFET | SILAN 士兰微 | | ||
7.4 Amps, 600 Volts N-CHANNEL MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
isc N-Channel Mosfet Transistor • DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirem | ISC 无锡固电 | | ||
7 Amps竊?00Volts N-Channel MOSFET ■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20Ω@VGS = 10 V ● Low gate cha | ESTEK 伊泰克电子 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
7A 600V N-channel Enhancement Mode Power MOSFET 文件：898.89 Kbytes Page：11 Pages | WXDH 东海半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
QFP |
71 |
||||
SILAN(士兰微电子) |
2511 |
5904 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
SILAN/士兰微 |
22+ |
TO220 |
20000 |
只做原装 品质保障 |
|||
SILAN |
22+ |
PDFN8 |
621 |
原装 |
|||
24+ |
N/A |
80000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SAMSUNG/三星 |
24+ |
QFP48 |
12000 |
原装正品 有挂就有货 |
|||
SAMSUNG/三星 |
25+ |
QFP48 |
996880 |
只做原装,欢迎来电资询 |
|||
SILAN/士兰微 |
25+ |
DFN |
10000 |
原厂原装,价格优势 |
|||
SAMSUNG |
16+ |
QFP |
1052 |
进口原装现货/价格优势! |
|||
冠坤电子 |
21+ |
10mm*12.5mm |
13 |
只做原装鄙视假货15118075546 |
SVSP7N60F规格书下载地址
SVSP7N60F参数引脚图相关
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SVSP7N60F数据表相关新闻
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SW-329，PZ3128-S10，PZ3128-S10BP，Q0256I-1N，Q1029A，Q1083A，Q1154A，Q1650C-2N，Q2240I-1N，Q2334C-50N，Q3036I-16N，Q475G，Q5112C-1N，Q5114C-2N，Q5116I-1N，Q5160I-2SI，Q5161I-2S1
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2019-11-11
DdatasheetPDF页码索引
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