位置：首页 > IC中文资料 > SVSP7N60FD2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SVSP7N60FD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 |   | |
SVSP7N60FD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60FD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60FD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60FD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
21+ |
TO220 |
38000 |
||||
SAMSUNG/三星 |
23+ |
QFP48 |
98900 |
原厂原装正品现货!! |
|||
SILAN/士兰微 |
25+ |
DFN |
10000 |
原厂原装,价格优势 |
|||
SAMSUNG |
16+ |
QFP |
1052 |
进口原装现货/价格优势! |
|||
24+ |
N/A |
80000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SAMSUNG |
24+ |
QFP |
71 |
||||
SILAN(士兰微电子) |
2511 |
5904 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
||||
冠坤电子 |
21+ |
10mm*12.5mm |
13 |
全新原装鄙视假货 |
|||
3M |
2022+ |
13 |
全新原装 货期两周 |
||||
SAMSUNG/三星 |
25+ |
QFP48 |
996880 |
只做原装,欢迎来电资询 |
SVSP7N60FD2芯片相关品牌
SVSP7N60FD2规格书下载地址
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SVSP7N60FD2数据表相关新闻
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2019-11-11
DdatasheetPDF页码索引
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