位置：首页 > IC中文资料 > SVSP7N60FJDD2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SVSP7N60FJDD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 |   | |
SVSP7N60FJDD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60FJDD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60FJDD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60FJDD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60FJDD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60FJDD2 | 超结MOS功率管 | SILAN 士兰微 | | |
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
25+ |
QFP48 |
996880 |
只做原装,欢迎来电资询 |
|||
SILAN/士兰微 |
21+ |
TO220 |
38000 |
||||
冠坤电子 |
21+ |
10mm*12.5mm |
13 |
全新原装鄙视假货 |
|||
SILAN/士兰微 |
25+ |
TO-252-2L |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
SILAN/士兰微 |
25+ |
DFN |
10000 |
原厂原装,价格优势 |
|||
3M |
新 |
17 |
全新原装 货期两周 |
||||
SAMSUNG/三星 |
23+ |
QFP48 |
98900 |
原厂原装正品现货!! |
|||
SAMSUNG |
24+ |
QFP |
71 |
||||
SAMSUNG/三星 |
24+ |
QFP48 |
12000 |
原装正品 有挂就有货 |
|||
SAMSUNG |
16+ |
QFP |
1052 |
进口原装现货/价格优势! |
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SVSP7N60FJDD2规格书下载地址
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SVSP7N60FJDD2数据表相关新闻
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2019-11-11
DdatasheetPDF页码索引
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