| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SVS24N60F | D-Well系列超级结高压MOSFET | SILAN 士兰微 |   | |
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
超结MOS功率管 | SILAN 士兰微 | | ||
D-Well系列超级结高压MOSFET | SILAN 士兰微 | | ||
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=23.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：281.56 Kbytes Page：4 Pages | DACO 罡境电子 | | ||
N-Channel Power MOSFET 文件：2.88047 Mbytes Page：6 Pages | FOSTER 福斯特半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
SL |
23+ |
TO247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
士兰微 |
22+ |
DO-201AD |
20000 |
只做原装 品质保障 |
|||
S |
24+ |
NA/ |
97 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
士兰微 |
24+ |
10000 |
原装现货 |
||||
士兰微 |
21+ |
DO-201AD |
12500 |
||||
SILAN/士兰微 |
2023+ |
TO252 |
15000 |
原厂全新正品旗舰店优势现货 |
|||
S |
TO-220F |
22+ |
6000 |
十年配单,只做原装 |
|||
SILAN/士兰微 |
21+ |
TO-3P |
880000 |
明嘉莱只做原装正品现货 |
|||
SILAN/士兰微 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
SVS24N60F芯片相关品牌
SVS24N60F规格书下载地址
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SVS24N60F数据表相关新闻
SVH-21T-P1.1 连接器，互连器件 矩形连接器 - 触头插口 触点 锡 18-22 AWG 压接
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2019-11-11
DdatasheetPDF页码索引
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