N-ChannelEnhancementModeMOSFET

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24A,600VDPMOSPOWERTRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

N-ChannelPowerMOSFET

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