600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=23.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

功率 MOSFET，N 沟道，QFET®，600V，23.5A，240 mΩ，TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •23.5A, 600V, RDS(on)= 240mΩ（最大值）@VGS = 10 V, ID = 11.8A栅极电荷低（典型值：110nC)\n•低 Crss（典型值56pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

HiPerFAST IGBT

HiPerFAST™ IGBT with Diode Combi Pack Features l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l M

HiPerFAST IGBT

Features • International standard packages JEDEC TO-247 AD • High frequency IGBT • High current handling capability • 3rd generation HDMOS™ process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers

HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications •

HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface)

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