isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 60-V (D-S) 175C MOSFET

文件：45.93 Kbytes Page：4 Pages

N-Channel 60-V (D-S) 175C MOSFET

N-Channel Enhancement-Mode Trans

N-Channel 60-V (D-S), 175C MOSFET

文件：47.33 Kbytes Page：4 Pages

N-Channel Enhancement-Mode Transistors

文件：72.2 Kbytes Page：4 Pages

N-Channel 60-V (D-S), 175C MOSFET

文件：77.8 Kbytes Page：4 Pages

N-Channel Enhancement-Mode Transistor, Logic Level

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N06 uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

Fast Switching Speed

文件：65.68 Kbytes Page：2 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.27408 Mbytes Page：7 Pages