位置：首页 > IC中文资料第3132页 > SUB75N06-12L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB75N06-12L | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
SUB75N06-12L | N-Channel 60-V (D-S), 175C MOSFET 文件：77.8 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SUB75N06-12L | N-Channel Enhancement-Mode Transistor, Logic Level | VISHAYVishay Siliconix 威世威世科技公司 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel 60-V (D-S), 175C MOSFET 文件：77.8 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
SUB75N06-12L产品属性
- 类型
描述
- 型号
SUB75N06-12L
- 功能描述
MOSFET 60V 75A 142W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
1932+ |
TO-263 |
681 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
08+ |
TO-263 |
348 |
||||
VISHAY |
25+23+ |
TO263 |
68818 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VISHAY/威世 |
25+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
|||
Vishay |
2024+ |
D2PAK(TO-263 |
50000 |
原装现货 |
|||
Vishay |
17+ |
TO-263 |
6200 |
||||
VISHAY |
24+ |
TO-263 |
8866 |
||||
VISHAY |
25+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
VISHAY |
24+ |
D2PAK(TO-263) |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY |
22+ |
TO-263 |
20000 |
公司只做原装 品质保证 |
SUB75N06-12L规格书下载地址
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DdatasheetPDF页码索引
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