位置：首页 > IC中文资料第3132页 > SUB75N06-07L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB75N06-07L | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
SUB75N06-07L | N-Channel60-V(D-S)175CMOSFET 文件：45.93 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：132.83 Kbytes Page：5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | | |
N-Channel60-V(D-S)175??MOSFET 文件：132.83 Kbytes Page：5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | | |
SUB75N06-07L产品属性
- 类型
描述
- 型号
SUB75N06-07L
- 功能描述
MOSFET 60V 75A 250W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
TO263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Vishay |
2024+ |
D2PAK(TO-263 |
50000 |
原装现货 |
|||
VISHAY/威世 |
20+ |
TO-263 |
32500 |
现货很近!原厂很远!只做原装 |
|||
VISHAY/威世 |
2022+ |
D2PAK(TO-263) |
48000 |
只做原装,原装,假一罚十 |
|||
VISHAY/威世 |
24+ |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
|||
VISHAY/威世 |
22+ |
SOT263 |
20000 |
保证原装正品,假一陪十 |
|||
VISHAY |
2022 |
TO-263 |
2600 |
||||
SILICONIX |
2020+ |
TO263 |
6000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SILICONIX |
1998 |
TO263 |
300 |
原装现货海量库存欢迎咨询 |
|||
VISHAY/威世 |
2022+ |
TO-263 |
12888 |
原厂代理 终端免费提供样品 |
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DdatasheetPDF页码索引
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