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STX1价格
参考价格：￥1.0114
型号：STX13003 品牌：STMicroelectronics 备注：这里有STX1多少钱，2025年最近7天走势，今日出价，今日竞价，STX1批发/采购报价，STX1行情走势销售排行榜，STX1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON NPN POWER DARLINGTON TRANSISTOR Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applica | STMICROELECTRONICS 意法半导体 |   | ||
SILICON NPN POWER DARLINGTON TRANSISTOR Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applica | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
AC-DC PWM CONTROLLER PRIMARY SWITCHING REGULATORS DESCRIPTION The AP8010 is a high performance AC-DC off‐line controller for low power battery charger and adapter applications with Universal‐input. It uses Pulse Frequency and Width Modulation (PFWM) method to build discontinuous conduction mode (DCM) flyback power supplies. The AP8010 util | AITSEMI 创瑞科技 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ Hi | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ Hi | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us | STMICROELECTRONICS 意法半导体 | | ||
Complementary power Darlington transistors 文件：343.01 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | | ||
Complementary power Darlington transistors 文件：343.01 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 100V 2A TO92AP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
SILICON NPN POWER DARLINGTON TRANSISTOR | STMICROELECTRONICS 意法半导体 | | ||
Complementary power Darlington transistors 文件：343.01 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：管件 描述：TRANS PNP 100V 2A TO92AP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
高压快速切换NPN功率晶体管 | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：260.1 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：260.1 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：260.1 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor 文件：315.84 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | |
STX1产品属性
- 类型
描述
- 型号
STX1
- 制造商
Thomas & Betts
- 功能描述
STAR TECK HL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2517+ |
TO92 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
STMicroelectronics |
23+ |
TO92 |
50000 |
只做原装正品 |
|||
STM |
16+ |
TO-92 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STX-12-PFC-A-HP-LR1 |
25+ |
15 |
15 |
||||
ST |
25+ |
TO-92 |
30000 |
代理全新原装现货,价格优势 |
|||
ST |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ST |
18+ |
TO-92 |
85600 |
保证进口原装可开17%增值税发票 |
|||
ST/意法 |
23+ |
TO92 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ST |
23+ |
TO-92 |
16900 |
正规渠道,只有原装! |
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DdatasheetPDF页码索引
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