HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ Hi

丝印代码：X13005；High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• High voltage capability\n• Minimum lot-to-lot spread for reliable operation• Low spread of dynamic parameters\n• Very high switching speed;

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS NPN 400V 3A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：260.1 Kbytes Page：9 Pages

High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us

丝印代码：X13005；High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ Hi

丝印代码：X13005G；High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us

丝印代码：X13005G；High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：260.1 Kbytes Page：9 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：260.1 Kbytes Page：9 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 3A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(4A,300-400V,75W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters. DC-DC conveter, Motor controls, Solenoiid / Relay dri

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS These devices are designedfor high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor

NPN SILICON POWER TRANSISTOR

SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT