isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=34A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.088Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600 V, 78 m typ., 34 A MDmesh M2 Power MOSFET in a TO247-4 package

Features • Excellent switching performance thanks to the extra driving source pin • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，TO-247封装

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.19475 Mbytes Page：21 Pages

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.17801 Mbytes Page：22 Pages

Low VCE(sat) IGBT, High Speed IGBT

Short Circuit SOA Capability. 40N60, 40N60A

40A, 600V FIELD STOP IGBT

DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance

IGBT

文件：247.74 Kbytes Page：9 Pages

Super Junction FREDFET

文件：317.04 Kbytes Page：5 Pages

Super Junction FREDFET

文件：191.93 Kbytes Page：5 Pages