1-Line Uni-directional TVS Diode

Features | ® Low operating voltage: 24V | © Ultra low capacitance: SOpF Max © Ultra low leakage: nA level © Low clamping voltage ® 2-pin leadless package © Complies with following standards © -IEC 61000-4-2 (ESD) immunity test ‘Air discharge: £30kV | Contact discharge: £30kV —~ IEC

NPN Silicon Transistor

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with STS1980

N - CHANNEL 30V - 0.039ohm - 5A SO-8 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N-CHANNEL 20V - 0.030 ohm - 5A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-CHANNEL 20V - 0.030 ohm - 5A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

Dual P-channel -30 V, 48 mΩ typ., -5 A, STripFET™ H6 Power MOSFET in an SO-8 package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The

P-CHANNEL 20V - 0.045??- 5A SO-8 STripFET??II MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and

N-Channel Super Trench Power MOSFET

Features VDS= 150V, ID= 5.1A RDS(ON)

N - CHANNEL 60V - 0.045ohm - 5A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

P-channel 30 V, 0.048 ??typ., 5 A STripFET??H6 DeepGATE??Power MOSFET in an SO-8 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance RDS(on) • Very low gate charge • High avalanche rugge

P - CHANNEL 30V - 0.053ohm - 5A SO-8 STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

Surface Mount Process Sealed Tactile

文件：264.93 Kbytes Page：2 Pages

Surface Mount Process Sealed Tactile

文件：264.93 Kbytes Page：2 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IP67 SURFACE MOUNT GULL WING TAC 开关 触摸开关

轻触开关

封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 3.3VWM 12VC SOD523 电路保护 TVS - 二极管

TVS Diode

TVS Diode

NPN Silicon Transistor

文件：204.95 Kbytes Page：4 Pages

NPN SILICON TRANSISTOR

文件：195.66 Kbytes Page：4 Pages

NPN Silicon Transistor

文件：233.44 Kbytes Page：4 Pages

N-channel 20V - 0.030 ohm- 5A SO-8 2.7V - drive STripFET TM II Power MOSFET

文件：308.04 Kbytes Page：12 Pages

N-channel 20V - 0.030 ohm- 5A SO-8 2.7V - drive STripFET TM II Power MOSFET

文件：308.04 Kbytes Page：12 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.0891 Mbytes Page：9 Pages

N-channel 60 V, 0.035, 5 A SO-8 STripFET II Power MOSFET

文件：286.81 Kbytes Page：12 Pages

N-Channel 150 V (D-S) MOSFET

文件：966.45 Kbytes Page：9 Pages

N-channel 150 V, 0.045, 5 A, SO-8

文件：573.06 Kbytes Page：12 Pages

N-Channel 150 V (D-S) MOSFET

文件：966.46 Kbytes Page：9 Pages

N-channel 150 V, 0.057廓, 5 A, SO-8 STripFET??DeepGATE??Power MOSFET

文件：716.04 Kbytes Page：11 Pages

N-Channel 150 V (D-S) MOSFET

文件：966.48 Kbytes Page：9 Pages

N-channel 150 V, 45 m廓, 5 A, SO-8 ultra low gate charge MDmesh??III Power MOSFET

文件：333.29 Kbytes Page：12 Pages

N-Channel 150 V (D-S) MOSFET

文件：966.49 Kbytes Page：9 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.2755 Mbytes Page：5 Pages

N-Channel 60-V (D-S) MOSFET

文件：892.46 Kbytes Page：9 Pages

N-CHANNEL 150V - 0.075 ohm - 5A SO-8 LOW GATE CHARGE STripFET??II POWER MOSFET

文件：277.78 Kbytes Page：8 Pages

N-Channel 150 V (D-S) MOSFET

文件：1.01281 Mbytes Page：9 Pages

P-CHANNEL 20V - 0.065 ohm - 5A SO-8 2.5V-DRIVE STripFET II POWER MOSFET

文件：173.85 Kbytes Page：8 Pages

P-channel 30V - 0.045OHM - 5A SO-8 STripFET TM Power MOSFET

文件：300.1 Kbytes Page：12 Pages

P-Channel MOSFET uses advanced trench technology

文件：1.40353 Mbytes Page：5 Pages

P-channel 30V - 0.045OHM - 5A SO-8 STripFET TM Power MOSFET

文件：300.1 Kbytes Page：12 Pages