DESCRIPTION

This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™”

strip-based process. The resulting transistor

shows extremely high packing density for low onresistance, rugged avalanche characteristics and

less critical alignment steps therefore a remarkable manufacturing reproducibility.

General Features

■ TYPICAL RDS(on) = 0.045 Ω

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

■ LOW THRESHOLD DRIVE

■ STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

APPLICATIONS

■ DC/DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

■ POWER MANAGEMENT IN CELLULAR

PHONES

■ DC MOTOR DRIVE