| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP7NB80FP | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP7NB80FP | N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | |
STP7NB80FP | N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
26+ |
QFP |
20000 |
公司只有正品,实单来谈 |
|||
ST |
1714+ |
TO220F |
104 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG |
25+ |
QFP256 |
100 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
26+ |
STP5TO3P-5 |
60000 |
只有原装 可配单 |
|||
ST |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
SAMSUNG |
25+ |
500000 |
行业低价,代理渠道 |
||||
SANKEN/三垦 |
2450+ |
TO3P-5 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PVLogic |
24+ |
NA |
1448 |
进口原装正品优势供应 |
|||
ST |
24+ |
TO-220F |
15000 |
原装现货热卖 |
STP7NB80FP规格书下载地址
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STP7NB80FP数据表相关新闻
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原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
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2020-6-26
DdatasheetPDF页码索引
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