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STP7NB80

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP7NB80

N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

更新时间:2026-5-19 16:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
TO-220FP
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
22+
TO-220
3000
原装正品,支持实单
ST
25+23+
TO220
18678
绝对原装正品全新进口深圳现货
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
23+
TO-220F
10000
专做原装正品,假一罚百!
ST
24+
TO-220F
15000
原装现货热卖
ST
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
ST
24+
TO-220
125000
ST
25+
TO-220F
20000
原装
ST
24+
TO-220
6232
公司原厂原装现货假一罚十!特价出售!强势库存!

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