位置：首页 > IC中文资料第65页 > STW7NB80
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STW7NB80 | N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 |   | |
STW7NB80 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |
STW7NB80产品属性
- 类型
描述
- 型号
STW7NB80
- 功能描述
MOSFET RO 512-FQA7N80
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
2023+ |
3000 |
进口原装现货 |
||||
ST品牌 |
2016+ |
TO-247 |
6528 |
房间原装进口现货假一赔十 |
|||
ADI |
23+ |
TO-247 |
8000 |
只做原装现货 |
|||
ST/意法 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
25+23+ |
TO-247 |
28234 |
绝对原装正品全新进口深圳现货 |
|||
ST |
24+ |
TO-247 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
23+24 |
TO-247 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
|||
ST |
05+ |
原厂原装 |
81 |
只做全新原装真实现货供应 |
STW7NB80芯片相关品牌
STW7NB80规格书下载地址
STW7NB80参数引脚图相关
- tda7294
- tda6101
- tda2822m
- tda2822
- tda2030功放电路图
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- t680
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- STWBC
- STWA3D
- STWA2AH
- STWA1SH
- STWA1S
- STWA1LH
- STWA1H
- STWA1FH
- STWA1AH
- STWA11
- STWA1
- STW9C2N
- STW9A2N
- STW8N80
- STW8C2N
- STW8A2N
- STW84V
- STW81V
- STW8019BS3R/LF
- STW8019BS3/T
- STW8019BS3
- STW8019B27T/LF
- STW8019B27R/LF
- STW8019A
- STW8019
- STW8009BS3T/LF
- STW8009BS3R/LF
- STW8009BS3/T
- STW8009BS3
- STW8009B27T/LF
- STW8009B27R/LF
- STW8009A
- STW8009_07
- STW8009
- STW7T16A
- STW7NK90Z
- STW7NC90Z
- STW7NC80Z
- STW7NA90FI
- STW7NA90
- STW7NA80FI
- STW7NA80
- STW7NA100FI
- STW7NA100
- STW7N95K3
- STW78N65M5
- STW77N65M5
- STW75NF30
- STW75NF20
- STW75N20
- STW75N06
- STW70N10F4
- STW6NK70Z
- STW6NC90Z
- STW6NC90
- STW6NB90
- STW6NB100
- STW6NA90
- STW5C2N
- STW5210
- STW5200
- STW5098
- STW5095
- STW5094
- STW5093
- STW4C2N
- STW4820
- STW4810
- STW4510
- STW4410
- STW4141
- STW4102
- STW3C2N
- STW3100
- STW3040
- STW2C2N
- STW20V
- STW20K
STW7NB80数据表相关新闻
STWBC2-HP
無線充電IC Digital controller for wireless battery charger transmitters
2024-2-28STWBC2-HP电能发射器
STMicroelectronics 的数字控制器专为帮助设计 Qi 认证的无线电力 TX 应用而设计
2023-5-4STW69N65M5 其他被动元件
STW69N65M5 其他被动元件 ST/意法
2023-2-10STW7N105K5 ST/意法半导体 场效应管MOSFET N-channel 1050 V, 1.4 Ohm typ 4 A MDmesh K5 Power MOSFET
原装正品 支持实单
2022-3-30STW6N95K5
製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: Through Hole 封裝/外殼: TO-247-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 950 V Id - C連續漏極電流: 9 A Rds On - 漏-源電阻: 1.25 Ohms Vgs - 閘極-源極電壓: - 30 V， + 30 V Vgs th - 門源門限電壓 :
2021-6-9STW8Q14C
STW8Q14C，全新原装当天发货或门市自取0755-82732291.
2020-3-15
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
