位置：首页 > IC中文资料第65页 > STW7NB80
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STW7NB80 | N-CHANNEL800V-1.6ohm-6.5A-TO-247PowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
STW7NB80 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-CHANNEL800V-1.2ohm-6.5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL800V-1.2ohm-6.5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL800V-1.2ohm-6.5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STW7NB80产品属性
- 类型
描述
- 型号
STW7NB80
- 功能描述
MOSFET RO 512-FQA7N80
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
|||
ST |
23+ |
TO-3P |
65480 |
||||
ST |
05+ |
原厂原装 |
81 |
只做全新原装真实现货供应 |
|||
ST |
23+24 |
TO-247 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
ST |
23+ |
TO-3P |
18689 |
||||
ST |
2023+ |
3000 |
进口原装现货 |
||||
24+ |
ST(3P) |
6430 |
原装现货/欢迎来电咨询 |
||||
ST |
21+ |
TO-3P |
23480 |
||||
ST/意法 |
22+ |
TO-247 |
97181 |
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STW7NB80规格书下载地址
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原装正品支持实单
2022-3-30STW6N95K5
製造商:STMicroelectronics 產品類型:MOSFET 技術:Si 安裝風格:ThroughHole 封裝/外殼:TO-247-3 晶體管極性:N-Channel 通道數:1Channel Vds-漏-源擊穿電壓:950V Id-C連續漏極電流:9A RdsOn-漏-源電阻:1.25Ohms Vgs-閘極-源極電壓:-30V，+30V Vgsth-門源門限電壓:
2021-6-9STW8Q14C
STW8Q14C，全新原装当天发货或门市自取0755-82732291.
2020-3-15
DdatasheetPDF页码索引
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