型号 功能描述 生产厂家&企业 LOGO 操作
STP12NB30FP

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03497 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03295 Mbytes Page:8 Pages

VBSEMI

微碧半导体

STP12NB30FP产品属性

  • 类型

    描述

  • 型号

    STP12NB30FP

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

更新时间:2025-8-14 10:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-220
8795
S
22+
TO-220F
6000
十年配单,只做原装
ST
16+
TO-220
10000
全新原装现货
ST/意法半导体
24+
TO-220-3
6000
全新原装深圳仓库现货有单必成
ST
25+23+
TO-220
27757
绝对原装正品全新进口深圳现货
ST/意法
23+
TO-220
30000
全新原装现货,价格优势
NEXPERIA/安世
23+
SOT108-1
69820
终端可以免费供样,支持BOM配单!
S
22+
TO-220F
25000
只做原装进口现货,专注配单
ST/意法
23+
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
17+
TO-220F
6200

STP12NB30FP数据表相关新闻