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型号 功能描述 生产厂家 企业 LOGO 操作
P12NB30FP

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

P12NB30FP

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03295 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03497 Mbytes Page:8 Pages

VBSEMI

微碧半导体

P12NB30FP产品属性

  • 类型

    描述

  • 型号

    P12NB30FP

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

更新时间:2026-3-18 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO-220
16900
支持样品,原装现货,提供技术支持!
ST
25+
TO-220
16900
原装,请咨询
ST
26+
TO-220
60000
只有原装 可配单
ST
25+
TOP220
4500
全新原装、诚信经营、公司现货销售!
ST
TO-220
22+
6000
十年配单,只做原装
24+
8866
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
ST/意法
500
FAIRCHILD/仙童
23+
TO-220F
56688
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票

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