型号 功能描述 生产厂家&企业 LOGO 操作
P12NB30

N-Channel 650 V (D-S) MOSFET

文件:1.03295 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03497 Mbytes Page:8 Pages

VBSEMI

微碧半导体

P12NB30产品属性

  • 类型

    描述

  • 型号

    P12NB30

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

更新时间:2025-8-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
9999
优势代理渠道,原装正品,可全系列订货开增值税票
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
ST/意法
500
ST
23+
TO-220
16900
正规渠道,只有原装!
ST/意法
23+
TO-220
56688
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
25+
TO-220
16900
原装,请咨询
ST/进口原
17+
TO-220
6200
ST
2511
TO-220
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST/意法
2022+
TO-220
12888
原厂代理 终端免费提供样品
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货

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