Extremely low gate charge

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N沟道600 V、0.395 Ohm典型值、9 A MDmesh M2功率MOSFET，TO-220封装

N-channel 600 V, 0.395 Ω typ., 9 A MDmesh M2 Power MOSFET in a DPAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout

Extremely low gate charge

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N-channel 600 V, 0.395 廓 typ., 9 A MDmesh??M2 Power MOSFET in an I짼PAKFP package

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N-channel 600 V, 0.400 廓 typ., 6.5 A MDmesh??M2 Power MOSFET in a PowerFLAT 5x6 HV package

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